W4B – Wednesday 28/9, 16:00-17:00

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16:00 – 17:00 Spectroscopy and Material Properties VIII (W4B) Auditorium 10

16:00 Detection Of Non-Radiative Defects In GaN With Laser THz Emission Microscopy W4B.1
Yuji Sakai1; Iwao Kawayama1; Hidetoshi Nakanishi2; Masayoshi Tonouchi1
1Osaka University, Japan; 2SCREEN Holdings Co., Ltd., Japan
16:15 Influence Of Doping Concentration And Surface Preparation On THz Emission From Silicon W4B.2
Ulrike Blumröder1; Heike Angermann2; Clemens Kloß1; Stefan Nolte1
1Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-University, Germany; 2Institut für Silizium-Photovoltaik, Helmholtz-Zentrum Berlin, Germany
16:30 Efficient Terahertz Generation By Ordered Arrays Of GaAs Nanowires W4B.3
Valerii Trukhin1; Alexey Bouravleuv2; Ilia Mustafin1; Joona-Pekko Kakko3; Teppo Huhtio3; Harri Lipsanen3; George Cirlin4; Sergey Morozov5; Dmitrii Kuritsyn5; Vladimir Rumyantsev5
1Ioffe Institute, ITMO University, Russian Federation; 2St Petersburg Academic University, Russian Federation; 3Aalto University, Finland; 4St Petersburg Academic University, ITMO University, Russian Federation; 5Institute for Physics of Microstructures RAS, Russian Federation
16:45 THz Spectroscopy And THz Generation In A Prussian Blue Analogue W4B.4
Amine Ould Hamouda1; Antonio Iazzolino2; Hiroko Tokoro3; Shin-Ichi Ohkoshi3; Eric Freysz4
1Universite Bordeaux, France; 2Université Bordeuax, France; 3The university of Tokyo, Japan; 4Université Bordeaux, LOMA, France